Philips buk856-400 iz 2 free download

File name buk856-400_iz_2.pdf

Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNIT insulated gate bipolar power transistor in a plastic envelope, V(CL)CER Collector-emitter clamp voltage 370 410 500 V intended for automotive ignition VCEsat Collector-emitter on-state voltage 2.2 V applications. The device has IC Collector current (DC) 20 A built-in zener diodes providing Ptot Total power dissipation 100 W active collector voltage clamping ECERS Clamped energy dissipation 300 mJ and ESD protection up to 2 kV. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION c tab 1 gate 2 collector 3 emitter g tab collector 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCE Collecter-emitter voltage tp 500